Reliability Study of Silicon Carbide Schottky Diode with Fast Electron Irradiation

摘要

The impact of fast electron exposure upon the performance of commercial silicon carbide Schottky diodes has been studied. Under 3 MeV electrons, absorbed dose of 10 and 15 MGy at room temperature, the forward current density-voltage characteristic of INFINEON and STMICROELECTRONICS devices have been decreased by 4.6 and 8.2 orders of magnitude respectively. The reduction is associated with the significant rise in the series resistance (INFINEON: 1.45 Ω to 121×10