Silicon carbide schottky diode comprises Schottky metal barrier (comprising titanium) formed on silicon face of silicon carbide epitaxial body comprising hydrogen-silicon carbide

摘要

A silicon carbide schottky diode comprises a silicon carbide substrate of one conductivity; a silicon face silicon carbide epitaxial body of one conductivity formed on a first surface of the silicon carbide substrate; a Schottky metal barrier (comprising titanium) formed on the silicon face of the silicon carbide epitaxial body; and a back power electrode on a second surface of the silicon carbide substrate opposite the first surface of the substrate. The silicon carbide epitaxial body comprises 4 hydrogen-silicon carbide.