Growth factor of Fe-doped semi-insulating InP by LP-MOCVD

摘要

Abstract: The semi-insulating InP has been grown using ferrocene as a dopant source by low pressure MOCVD. Fe doped semi-insulating InP material whose resistivity is equal to 2.0 $MUL 10$+8$/ approximately ega@*cm and the breakdown field is greater than 4.0 $MUL 10$+4$/Vcm$+$MIN@1$/ has been achieved. It is found that the magnitude of resistivity increases with growing pressure enhancement under keeping TMIn, PH$-3$/, ferrocene $LB@Fe(C$- 5$/H$-5$/)$-2$/$RB flow constant at 620 degrees Celsius growth temperature. Moreover, the experimental results which resistivity varies with ferrocene mole fraction are given. It is estimated that active Fe doping efficiency, $eta@, is equal to 8.7 $MUL 10$+$MIN@4$/ at 20 mbar growth pressure and 620 degrees Celsius growth temperature by the comparison of calculated and experimental results. !11