Low-loss electron imaging and its application to critical dimension metrology

摘要

Abstract: Low-loss electron (LLE) imaging has been shown to havesignificant advantages over both secondary electron andconventional backscattered electron imaging for thepurposes of inspection and critical dimension metrologyof integrated circuits. LLE images had high-resolution, good atomic contrast and fewer chargingartifacts. Further, they were easily optimized usingMonte Carlo simulations; and the optimized LLE imagesshowed excellent precision, accuracy, and linearity inboth process control and focus-exposure applications.!1