Application of the low-loss scanning electron microscope image to integrated circuit technology. Part 1– applications to accurate dimension measurements

著录项

• 来源
  《Scanning》 |2001年第5期|298-304|共7页
• 作者

  Michael T. Postek; AndrÁs E. VladÁr; Oliver C. Wells; Jerry L. Lowney;

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• 作者单位

  National Institute of Standards and Technology Gaithersburg Maryland;

  National Institute of Standards and Technology Gaithersburg Maryland;

  IBM Research Division Yorktown Heights New York USA;

  National Institute of Standards and Technology Gaithersburg Maryland;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《化学文摘》(CA);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  low-loss electrons; low accelerating voltage; scanning electron microscopy; metrology; backscattered electrons;

  机译：低损耗电子;低加速电压;扫描电子显微镜;计量学;反向散射电子;