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Integrated circuit critical-dimension optimization through correlation of resist spin speed substrate reflectance and scanning electron microscope measurements

机译:通过抗蚀剂自旋速度衬底反射率和扫描电子显微镜测量值的相关性,对集成电路关键尺寸进行优化

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Abstract: A procedure is described for predicting the optimum resist thickness to insure a reflectivity minimum at the wavelength of interest regardless of the underlying surface reflectivity. An experiment was performed using polysilicon on oxide wafers to demonstrate that uniform CDs could be patterned for a variety of reflectances. !2
机译:摘要:描述了一种程序,用于预测最佳抗蚀剂厚度,以确保在目标波长下的反射率最小,而与下面的表面反射率无关。使用多晶硅在氧化物晶片上进行的实验表明,可以为各种反射率图案化均匀的CD。 !2

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