Low-loss electron imaging and its application to critical dimensionmetrology,

摘要

Abstract: Low-loss electron (LLE) imaging has been shown to have significant advantages over both secondary electron and conventional backscattered electron imaging for the purposes of inspection and critical dimension metrology of integrated circuits. LLE images had high- resolution, good atomic contrast and fewer charging artifacts. Further, they were easily optimized using Monte Carlo simulations; and the optimized LLE images showed excellent precision, accuracy, and linearity in both process control and focus-exposure applications. !1