High-power AlGaN/GaN HFET with a lower on-state resistance and a higher switching time for an inverter circuit

摘要

We report on an AlGaN/GaN HFET with a much lower on-state resistance and the application of an inverter circuit using AlGaN/GaN HFETs for the first time. An AlGaN/GaN HFET was fabricated. We confirmed that the AlGaN/GaN HFET was operated at a current of over 20 A using gas-source molecular-beam epitaxy. The on-state resistance of the HFET was 8 mΩ·cm² at 370 V. The switching time was investigated. As a result, the turn-on time was found to be 10 ns and the turn-off time was 11 ns. The maximum operation frequency of an AlGaN/GaN HFET was 0.37 GHz. We also fabricated an inverter circuit using AlGaN/GaN HFETs. Using this inverter, DC 30 V was converted to AC 100 V.