Deep trench terminations using ICP RIE for ideal breakdown voltages

摘要

Deep trench terminations (DTT) having no cylindrical and spherical junctions are proposed for high voltage power devices. The proposed junction terminations are implemented using ICP RIE in the edge area including scribe lane, and show near ideal breakdown voltages. The devices with deep trench terminations have higher breakdown voltages consuming much smaller junction termination area than the conventional devices with multiple field limiting rings at the same voltage and current ratings.