High voltage semiconductor device having deep trench terminations and method for fabricating the same

摘要

PURPOSE: A high voltage semiconductor device with a deep trench termination is provided to improve breakdown voltage by forming a trench that passes through a p typed base region and an n¬- typed collector region and reaches a predetermined depth of an n¬+ typed collector region. CONSTITUTION: A high density collector region(200) of the first conductivity type, a low density collector region(210) of the first conductivity type and a low density base region(220) of the second conductivity type are sequentially formed on a high voltage semiconductor substrate. A trench(260) that passes through the base region and the low density collector region and reaches a predetermined depth of the high density collector region is included, located in the outermost portion of the device including a scribe line.