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Insulated Metal Substrate for High-Temperature Power Electronics Packaging

机译:高温电力电子封装的绝缘金属基板

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Direct bond copper substrates (DBC) are commonly used in power electronics packages and modules. The thick copper layer bonded to the ceramic substrate provides high current handling capacity while the ceramic has a higher thermal conductivity (e.g.,AlN) than a glass or glass-ceramic. Early failure of the DBC substrate was observed during relatively aggressive temperature cycling tests (−55°C to 250°C),raising concerns regarding its reliability and suitability for high-temperature power packages. An insulated metal substrate consisting of a cordierite-base glass-ceramic sintered on a molybdenum substrate that was developed for other applications is being investigated as a potential alternative to DBC. The glass-ceramic has a slightly lower coefficient of thermal expansion (CTE) of 4.1 ppm/°C than the molybdenum such that it is under compression below the processing temperature making the coating stable. A potential advantage seen with this substrate is that the molybdenum can simultaneously serve as the baseplate for the module and heat spreader/heat sink,thus eliminating several interfaces from the heat dissipation path. The adhesion of the coating is excellent and the interfacial fracture toughness obtained from indentation tests ranged from 10 to 19 J/mm~2 or higher. The insulator/metal interface of the substrate has significantly outlasted the DBC substrate,with no visual evidence of incipient failure of the insulating layer after 300 cycles (−50°C to 250°C). It is matched only by an AlN direct bonded aluminum (DAB) substrate.
机译:直接键合铜基板(DBC)通常用于电力电子封装和模块。结合到陶瓷衬底上的厚铜层提供高电流处理能力,而陶瓷具有比玻璃或玻璃陶瓷更高的导热率(例如,AlN)。在相对激进的温度循环测试(-55°C至250°C)中观察到DBC基板的早期失效,引起了对其可靠性和高温功率封装适用性的担忧。目前正在研究一种绝缘金属基底,该基底由在钼基底上烧结的堇青石基玻璃陶瓷组成,并已开发用于其他用途,作为DBC的潜在替代品。该玻璃陶瓷的热膨胀系数(CTE)比钼略低,为4.1 ppm /°C,因此在低于加工温度的情况下处于压缩状态,从而使涂层稳定。该基板的潜在优势在于,钼可以同时用作模块和散热器/散热器的基板,从而消除了散热路径中的多个界面。涂层的附着力极佳,通过压痕测试获得的界面断裂韧性为10至19 J / mm〜2或更高。基板的绝缘体/金属界面的寿命大大延长了DBC基板的寿命,没有视觉证据表明在300次循环(-50°C至250°C)后绝缘层会发生早期破坏。它仅与AlN直接键合铝(DAB)基板匹配。

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