Extracting the fixed charge density in HfOx films grown on highly-doped p-Si samples

摘要

passivated highly doped c-Si samples. This contactless technique can, unlike conventional capacitance-voltage measurements, be applied to highly doped surfaces provided the surface becomes heavily depleted or inverted as the injection level increases. By fitting the measured injection level dependent effective lifetime curve before and after annealing, Qf and the surface recombination velocity parameters, S