Modified SILAR Grown ZnO Films on p-Si(100) with Enhanced Charge Separation for UV Light Sensing Application

摘要

Herein, the growth of pristine ZnO nanostructures thin film on p-Si(100) bymodified successive ionic layer adsorption-reduction method, revealing significantimprovement in the charge collection for ultraviolet light detection, isreported. The deposited ZnO exhibits spindle-like and hexagonal structure thatgrows preferentially along the c-axis. Two-probe electrical measurements validatethe rectifying nature of the constructed n-ZnO/p-Si(100), revealing a substantial11.3-fold increase in photocurrent at room temperature under 375 nm irradiationat＋3 V working voltage. The drastic increase in photocurrent is linked to efficientcharge separation caused by charge transfer and band bending effects, asindicated by microsecond time-resolved absorption measurements, providinguseful information for device development.