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APPLICATION OF DOPED ZNO FILMS ON POLYMERIC SUBSTRATES BY CHEMICAL DEPOSITION FROM A GAS PHASE UNDER UV

机译:掺杂ZNO膜在紫外光下气相化学沉积在聚合物基体上的应用。

摘要

1. A method of forming a layer on a polymer substrate, including: (a) contacting the polymer substrate with at least one precursor; and (b) the action of ultraviolet light to degrade at least one precursor and apply a layer to the polymeric substrate. The method of forming a layer on a polymer substrate according to claim 1, wherein the at least one precursor contains a dopant. The method of forming a layer on a polymer substrate according to claim 2, wherein the dopant is at least one metal selected from the group consisting of Al, Ga, In, Tl and B. The method of forming a layer on a polymer substrate according to claim 1, wherein the at least one precursor contains zinc. The method of forming a layer on a polymer substrate according to claim 4, wherein the layer is a doped zinc oxide layer. The method of forming a layer on a polymer substrate according to claim 1, wherein the layer is a transparent electrically conductive oxide layer. The method of forming a layer on a polymer substrate according to claim 6, wherein the transparent electrically conductive oxide layer has a resistivity of less than about 1 x 10Ω cm. The method of forming a layer on a polymer substrate according to claim 1, wherein step (b) occurs at less than about 200 ° C. The method of forming a layer on a polymer support according to claim 1, wherein step (b) occurs at about 160-200 ° C. The method of forming a layer on a polymer substrate according to claim 1, wherein at least one precursor is introduced in the gas phase in step (a). The method of forming a layer on a polymeric substrate according to claim 1, wherein said contacting is carried out at approximately atmospheric pressure. The method of forming a layer on a polymer substrate according to claim 1, wherein the polymer substrate is selected from the group consisting of
机译:1.一种在聚合物基底上形成层的方法,包括:(a)使所述聚合物基底与至少一种前体接触; (b)紫外线使至少一种前体降解并在聚合物基材上施加一层的作用。 2.根据权利要求1所述的在聚合物基板上形成层的方法,其中,所述至少一种前体包含掺杂剂。 3.根据权利要求2所述的在聚合物基板上形成层的方法,其中,所述掺杂剂是选自由Al,Ga,In,Tl和B组成的组中的至少一种金属。 2.根据权利要求1的方法,其中所述至少一种前体含有锌。 5.根据权利要求4所述的在聚合物基板上形成层的方法,其中,所述层是掺杂的氧化锌层。 2.根据权利要求1所述的在聚合物基板上形成层的方法,其中,所述层是透明导电氧化物层。 7.根据权利要求6所述的在聚合物基板上形成层的方法,其中,所述透明导电氧化物层的电阻率小于约1×10Ωcm。 2.根据权利要求1所述的在聚合物基材上形成层的方法,其中步骤(b)在低于约200℃下发生。3.根据权利要求1所述的在聚合物支撑体上形成层的方法,其中步骤(b)发生2.根据权利要求1的在聚合物基材上形成层的方法,其中在步骤(a)中将至少一种前体引入气相中。 2.根据权利要求1所述的在聚合物基材上形成层的方法,其中,所述接触在大约大气压下进行。 2.根据权利要求1所述的在聚合物基板上形成层的方法,其中,所述聚合物基板选自由以下组成的组:

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