机译:不同退火气氛对在p-Si(100)衬底上生长的ZnO薄膜的表面和微结构性能的影响
Division of Electron Microscopic Research, Korea Basic Science Institute (KBS1) 113, Cwahangno, Yuseong-gu, Daejeon 305-333, Republic of Korea;
Department of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea;
Department of Materials Science and Engineering, KA1ST, Daejeon 305-701, Republic of Korea;
Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Republic of Korea;
Thin Film Material Research Center, Korea Institute of Science and Technology, Seoul 136-701, Republic of Korea;
Department of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea;
zno thin film; microstructural property; different annealing;
机译:热退火对在p-Si(100)衬底上生长的ZnO薄膜的表面和微观结构特性的影响
机译:由于在n-Si(100)衬底上生长的Al掺杂ZnO薄膜中通过热退火形成的非晶区而导致的微观结构和表面特性变化
机译:退火对p-InP(100)衬底上生长的ZnO薄膜的微结构性能的影响
机译:退火气氛对原子层沉积生长ZnO薄膜光电性能的影响
机译:磁性生长和氧退火的SnO2:Co薄膜的物理性质。
机译:快速热退火对原子层沉积生长Zr掺杂ZnO薄膜的结构电学和光学性质的影响
机译:p-si衬底上生长c轴取向ZnO薄膜的原子排列及形成机理