X-ray photoelectron spectroscopy study of highly-doped ZnO: Al,N films grown at O-rich conditions

摘要

Highly-doped ZnO: Al,N films were grown under oxygen-rich conditions on Si substrates by magnetron sputtering using a layer-by-layer growth technique. An investigation of the highly-doped ZnO: Al, N films is attractive for obtaining p-type conductivity in ZnO films as well as for an improvement of performance of ZnO-based ultraviolet (UV) detectors. X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis (EDX), X-ray photoelectron spectroscopy (XPS), X-ray emission spectroscopy (XES) and Secondary ion mass spectrometry (SIMS) were used for the samples characterization. An effect of high Al and N doping on structure and electronic properties of ZnO films was studied and discussed. (C) 2017 Elsevier B.V. All rights reserved.