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Control of ion energy distributions using phase shifting in multi-frequency capacitively coupled plasmas

机译:在多频电容耦合等离子体中使用相移控制离子能量分布

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Summary form only given. Anisotropic etching for microelectronics fabrication is accomplished by energetic ion bombardment in chemically enhanced sputtering. One challenge is being able to control the ion energy-angular distributions (IEADs) onto the surface of the wafer to selectively activate desired processes, which is advantageous for maintaining the critical dimension (CD) of features. Capacitive coupled plasmas (CCPs) powered by non-sinusoidal waveforms and or using multiple frequencies are strategies employed to provide flexible control of IEADs which produce high selectivity and uniformity. Varying relative voltages, powers and phases between multiple frequencies that differ by integer multiples have demonstrated potential control mechanisms for the IEADs and optimization of etching profiles. In this paper, we report on computational and experimental investigations of lEAD control in a dual-frequency CCP where the phase between the frequencies is used as a control variable. The rf frequency and its harmonic frequencies are both applied to the wafer substrate. Both symmetric and asymmetric CCPs are studied. The Hybrid Plasma Equipment Model (HPEM) was employed to predict plasma properties and obtain the harmonic contributions to the power applied to the same electrode. The ion and radical fluxes incident onto the surface are used as input to the Monte Carlo Feature Profile Module (MCFPM) with which profiles are predicted. The operating conditions are 5-100 mTorr in Ar and Ar/CF/O gas under different frequency mixing and phase of integer multiple frequency drives. We find that by changing the phase between the applied rf frequency and its second harmonic, the Electrical Asymmetric Effects (EAE) is significant and can shift the dc self-bias.[I] When changing phases between the rf and its higher harmonics, the EAE becomes less effective and ion energy distributions spike at specific energies. Computed results for lEADs are compared with - f phase locked harmonic experimental results measured by Radio Frequency Ion Energy Analyzer.
机译:仅提供摘要表格。微电子制造的各向异性蚀刻是通过化学增强溅射中的高能离子轰击完成的。一个挑战是能够控制晶片表面上的离子能角分布(IEAD)以选择性地激活所需的工艺,这对于保持特征的临界尺寸(CD)是有利的。由非正弦波形供电或使用多个频率的电容耦合等离子体(CCP)是用于灵活控制IEAD的策略,可产生高选择性和均匀性。在以整数倍数相差的多个频率之间变化的相对电压,功率和相位已经证明了IEAD的潜在控制机制和蚀刻轮廓的优化。在本文中,我们报告了在双频CCP中以频率之间的相位作为控制变量的lEAD控制的计算和实验研究。射频频率及其谐波频率都施加到晶片基板上。研究了对称和非对称CCP。混合等离子体设备模型(HPEM)用于预测等离子体性能并获得对施加到同一电极的功率的谐波贡献。入射到表面上的离子和自由基通量被用作蒙特卡洛特征轮廓模块(MCFPM)的输入,通过该模块可以预测轮廓。在不同的频率混合和整数倍频驱动器的相位下,Ar和Ar / CF / O气体中的工作条件为5-100 mTorr。我们发现,通过在施加的rf频率及其二次谐波之间改变相位,电非对称效应(EAE)显着,并且可以改变直流自偏压。[I]当在rf及其高次谐波之间改变相位时, EAE的效率降低,并且离子能量分布在特定能量处达到峰值。将lEAD的计算结果与-RF离子能量分析仪测得的-f锁相谐波实验结果进行比较。

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