POTENTIAL ANALYZING METHOD BY BIAS PHASE CONTROL OF CAPACITIVELY COUPLED PLASMA SOURCE CAPABLE OF CONTROLLING ION ENERGY DISTRIBUTION

摘要

PURPOSE: A potential analyzing method by a bias phase control of a capacitively coupled plasma source is provided to output the optimum process condition by calculating an electrode and plasma potential from a circuit model according to a phase difference of a bias source.;CONSTITUTION: Plasma density, an electron temperature, the amplitude of potential applied to an electrode, the diameter of the electrode, the capacity of a blocking capacitor, the height of equipment, an applied voltage, a frequency, pressure, and a phase difference condition are inputted to an input module by using a circuit model in an etching process of a semiconductor wafer(10). The optimum process condition is outputted by solving potential values of a circuit equation modeled by a calculation module and outputting the optimum phase difference from the calculated potential(20). Each circuit device value and the optimum phase difference are outputted from the circuit equation numerically solved according to an external input factor(30).;COPYRIGHT KIPO 2012