Study of Work-Function Variation Effects in Multigate Tunneling Field Effect Transistors

摘要

The impacts of metal-gate work-function variation (WFV) effects in Fin tunnel field effect transistors (TFETs) and gateall-around (GAA) TFETs are investigated with 3-D technology computer aided design (TCAD) simulations. Metal grains generated with Voronoi method and square method are also compared. The impacts of WFV effect on fin TFETs and GAA TFETs increase with metal grain size increase in terms of threshold voltage (V