MULTIGATE TRANSISTOR DEVICE AND METHOD OF ISOLATING ADJACENT TRANSISTORS IN MULTIGATE TRANSISTOR DEVICE USING SELF-ALIGNED DIFFUSION BREAK (SADB)

摘要

A multigate transistor device such as a fin-shaped field effect transistor (FinFET) is fabricated by applying a self-aligned diffusion break (SADB) mask having an opening positioned to expose an area of at least one portion of at least one gate stripe designated as at least one tie-off gate in the multigate transistor device and removing the tie-off gate through the opening of the SADB mask to isolate transistors adjacent to the tie-off gate.