Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA USA;
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA USA;
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA USA;
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA USA;
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA USA;
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA USA;
Institute of Experimental Physics, Otto-von-Guericke University Magdeburg, Germany;
Institute of Experimental Physics, Otto-von-Guericke University Magdeburg, Germany;
Institute of Experimental Physics, Otto-von-Guericke University Magdeburg, Germany;
Institute of Experimental Physics, Otto-von-Guericke University Magdeburg, Germany;
Physics Department, Arizona State University, Tempe, AZ USA;
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA USA;
semipolar GaN; nitride; MOCVD; si; time-resolved photoluminescence;
机译:图案化Si衬底上半极性(1101)GaN中的应变和缺陷分布的光学研究
机译:图案化Si衬底上半极性(1101)GaN中的应变和缺陷分布的光学研究
机译:通过MOCVD在图案化蓝宝石衬底上生长的(11-22)半极性GaN中的缺陷减少方法:向无基础堆叠缺陷的异质外延半极性GaN迈进
机译:通过MOCVD在Si图案化衬底上生长的非极性(1〜-100)和半极性(1〜-101)GaN的光学特性
机译:通过新颖的衬底改性技术在GaN上进行GaN的MOCVD生长。
机译:Si(100)衬底上的半极性r平面ZnO薄膜:薄膜外延和光学性质
机译:GaN体衬底上的半极性(11(2)-bar2)GaN和InGaN / GaN量子阱的外延生长和光学性质