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机译:图案化Si衬底上半极性(1101)GaN中的应变和缺陷分布的光学研究
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA;
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA;
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA;
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA;
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA;
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA;
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Magdeburg D-39106, Germany;
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Magdeburg D-39106, Germany;
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Magdeburg D-39106, Germany;
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Magdeburg D-39106, Germany;
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA;
机译:图案化Si衬底上半极性(1101)GaN中的应变和缺陷分布的光学研究
机译:减少在图案化硅衬底上生长的半极性(1101)InGaN / GaN发光二极管中的效率下降
机译:通过MOCVD在图案化蓝宝石衬底上生长的(11-22)半极性GaN中的缺陷减少方法:向无基础堆叠缺陷的异质外延半极性GaN迈进
机译:MOCVD生长条件对Si图案化衬底上半极性(1101)GaN光学性能的影响
机译:热,应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
机译:Si(111)衬底上GaN纳米线中应变分布的高分辨率X射线衍射分析
机译:图案化Si衬底上半极性(1(1)over-bar01)GaN中的应变和缺陷分布的光学研究