Dept. of Electrical Computer Eng. Virginia Commonwealth Univ. Richmond, VA USA 23284;
Dept. of Physics, Univ. of Michigan, Ann Arbor, MI USA 48109;
Code 5613, Naval Research Lab, Washington, DC USA 20375;
Air Force Research Laboratory, Wright Patterson AFB;
AlGaN/AlN/GaN heterostructure; 2DEG; magneto-transport; MOVPE; epitaxial lateral overgrowth; quantitative mobility spectrum analysis (QMSA); hall measurements; Shubnikov-de Haas; threading dislocation; defect reduction;
机译:外延AlN /蓝宝石模板上生长的高迁移率AlGaN / AlN / GaN异质结构的纳米结构表征和二维电子气性质
机译:铟含量低(0.064≤x≤0.140)势垒的In_xAl_(1-x)N / AlN / GaN / AlN异质结构中二维电子气的双子带占据
机译:二维电子气的AlN / GaN / AlGaN和AlN / GaN / InAlN异质结构的参数对其电性能和晶体管特性的影响
机译:具有高迁移率二维电子气体的MOVPE-生长AL_XGA(1-X)N / ALN / GAN异质结构的磁传输性能
机译:硅/硅锗锗异质结构中的高迁移率二维电子:实现和传输性质。
机译:X射线光发射光谱法测量的非极性A面GaN / AlN和AlN / GaN异质结构的能带偏移
机译:高质量AlGaN / AlN / GaN和AlInN / AlN / GaN二维电子气异质结构的传输性能比较