机译:铟含量低(0.064≤x≤0.140)势垒的In_xAl_(1-x)N / AlN / GaN / AlN异质结构中二维电子气的双子带占据
Nanotecimology Research Center, Bilkent University, Bilkent, 06800 Ankara, Turkey Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar, 06500, Ankara, Turkey;
Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar, 06500, Ankara, Turkey;
Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar, 06500, Ankara, Turkey;
Nanotecimology Research Center, Bilkent University, Bilkent, 06800 Ankara, Turkey;
Nanotecimology Research Center, Bilkent University, Bilkent, 06800 Ankara, Turkey;
Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar, 06500, Ankara, Turkey;
Nanotecimology Research Center, Bilkent University, Bilkent, 06800 Ankara, Turkey Department of Physics, Bilkent University, Bilkent, 06800 Ankara, Turkey Department of Electrical and Electronics Engineering, Bilkent University, Bilkent, 06800 Ankara, Turkey;
indium aluminum nitride; metal organic chemical vapor deposition; two dimensional electron gas; hall effect;
机译:超薄屏障AlN / GaN异质结构中二维电子气体的三个子带占用
机译:(In_xAl_(1-x)N / AlN)MQWs / InN / GaN异质结构的二维电子气特性的自洽模拟
机译:由于在Al_xGa_(1-x)N / GaN异质结构中嵌入了AlN势垒层,二维电子气的载流子密度和迁移率发生了变化
机译:具有薄AlN顶部势垒的AlN / GaN / AlN双异质结构
机译:Gan-On-Aln作为高压互补电子设备的平台
机译:表面钝化对超薄AlN / GaN异质结构场效应晶体管中AlN势垒应力和散射机理的影响
机译:InxAl1-xN / AlN / \ ud中二维电子气的双子带占据 铟含量低(0.064≤x≤0.140)的GaN / AlN异质结构
机译:无掺杂GaN / alN / alGaN径向纳米线异质结构作为高电子迁移率晶体管。