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Study of conductance fluctuations (1/f~α noise) in metal film during electromigration stressing

机译:电迁移应力作用下金属膜电导波动(1 / f〜α噪声)的研究

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We have studied the conductance fluctuation in metal film which is under electromigration stressing. The apparatus used by us allows measurement of noise with an ac 5-probe technique with a superimposed dc stressing current (typically 2MA/cm~2). This allows measurement of noise in the film at different stages of the electromigration process till the film is damaged completely. We study both the spectral power S_V(f) and also the probability density function (PDF) from the time series. The electromigration stressing was done to elevated temperature on Al and Cu metal lines grown by RF magnetron sputtering. Principal motivation of the investigation is to study low frequency defect relaxations in the metal film due to electromigration that give rise to conductance fluctuations with a spectral power S_V(f) ∝ 1/f~α. S_V(f)) (both magnitude as well as the spectral power quantified through α ) shows changes continuously and some times non-monotonically during the electromigration process and it is large just before the damage of the film. Itwas also observed that the PDF width increases significantly during the course of the em stressing and it changes from a Gaussian to a non Gaussian PDF.
机译:我们研究了在电迁移应力下金属膜的电导波动。我们使用的设备允许使用交流5探针技术和叠加的直流应力电流(通常为2MA / cm〜2)来测量噪声。这样可以在电迁移过程的不同阶段测量薄膜中的噪声,直到薄膜完全损坏为止。我们从时间序列中研究频谱功率S_V(f)和概率密度函数(PDF)。在通过RF磁控管溅射生长的Al和Cu金属线上对电迁移应力进行了高温处理。研究的主要动机是研究由于电迁移引起的金属膜中的低频缺陷弛豫,该弛豫引起谱功率为S_V(f)∝ 1 / f〜α的电导波动。 S_V(f))(幅值以及通过α量化的光谱功率)在电迁移过程中均显示连续且非单调的变化,并且在膜损坏之前较大。还观察到在em应力过程中PDF宽度显着增加,并且从高斯PDF变为非高斯PDF。

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