Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor

摘要

Experimental results are presented for SiC epitaxial layer growths employing a large-area, 7x3-inch, warm-wall planetary SiC-VPE reactor. This high-throughput reactor has been optimized for the growth of uniform 0.01 to 30-micron thick, specular, device-quality SiC epitaxial layers with background doping concentrations of < 1x10~(14) cm~(-3). Multi-layer device profiles such as Schottky, MESFETs, SITs, and BJTs with n-type doping from ～1x10~(15) cm~(-3) to >1x10~(19) cm~(-3), p-type doping from ～3x10~(15) cm~(-3) to >1x10~(20) cm~(-3), and abrupt doping transitions (～1 decadem) are regularly grown in continuous growth runs. Intrawafer layer thickness and n-type doping uniformities of < 1% and < 5% σ/mean have been achieved. Within a run, wafer-to-wafer thickness and doping variation are ～ ± 1% and ～ ± 5% respectively. Long term run-to-run variations while under process control are approximately ～ 3% σ/mean for thickness and ～5% σ/mean for doping. Latest results from an even larger 6x4-inch (100-mm) reactor are also presented.