Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC

机译：注入氢或氦气的6H SiC退火过程中缺陷及与氢有关的低温光致发光光谱的演化

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A set of four lightly p-type 6H SiC boule samples was implanted with H or He and annealed in isochronal stages from 950℃ to 1500℃. Differences in the hydrogen, D_Ⅰand D_Ⅱ low temperature photoluminescence spectra are observed and compared. Surprisingly, the hydrogen spectrum appears after a 1300℃ anneal in the He implanted samples. A number of unidentified damage lines are also reported.

机译：一组四个轻p型6H SiC晶锭样品被注入H或He，并在950℃至1500℃的等时阶段退火。观察并比较了氢，D_Ⅰ和D_Ⅱ低温光致发光光谱的差异。出人意料的是，He注入的样品在1300℃退火后出现了氢谱。还报告了许多不确定的损坏线。

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来源
《European Conference on Silicon Carbide and Related Materials(ECSCRM 2004); 20040831-0904; Bologna(IT)》|2004年|P.493-496|共4页
会议地点 Bologna(IT)
作者
F. Yan; R.P. Devaty; W.J. Choyke; A. Gali; F. Schmid; G. Pensl; G. Wagner;
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作者单位

Dept. of Physics and Astronomy, 100 Allen Hall, Univ. of Pittsburgh, Pittsburgh, PA 15260, USA;

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原文格式 PDF
正文语种 eng
中图分类材料;第Ⅳ族非金属元素（碳和硅）及其化合物;
关键词
hydrogenl helium; D_Ⅰ; D_Ⅱ; implantation; Photoluminescence; defects;

机译：氢氦;D_Ⅰ;D_Ⅱ;注入;光致发光;缺陷;

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专利

1. Newly Resolved Phonon-Assisted Transitions and Fine Structure in the Low Temperature Wavelength Modulated Absorption and Photoluminescence Spectra of 6H SiC [J] . Walter M. Klahold, Wolfgang J. Choyke, Robert P. Devaty Materials science forum . 2019,第期

机译：新分辨的声子辅助转变和精细结构在6小时的低温波长调制吸收和光致发光光谱中
2. Defects annealing in 4H-SiC epitaxial layer probed by low temperature photoluminescence [J] . Litrico G., Zimbone M., Musumeci P., Materials science in semiconductor processing . 2012,第6期

机译：低温光致发光探测4H-SiC外延层中的缺陷退火
3. Defect evolution in ultralow energy, high dose helium implants of silicon performed at elevated temperatures [J] . Haynes K., Hu X., Wirth B. D., Journal of Applied Physics . 2018,第16期

机译：在高温下进行的超低能量，大剂量氦硅注入中的缺陷演变
4. Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC [C] . F. Yan, R.P. Devaty, W.J. Choyke European Conference on Silicon Carbide and Related Materials . 2005

机译：缺陷和氢气相关低温光致发光光谱的演变与退火氢气或氦气注入6H SiC
5. Crystal orientation effects on implantation of low-energy hydrogen, helium and hydrogen/helium mixtures in plasma-facing tungsten surfaces. [D] . Linn, Brian C. 2014

机译：晶体取向对面向等离子体的钨表面中注入低能氢，氦和氢/氦混合物的影响。
6. Evolution of Helium Bubbles and Discs in Irradiated 6H-SiC during Post-Implantation Annealing [O] . Qiang Shen, Wei Zhou, Guang Ran, 2017

机译：注入后退火过程中辐照的6H-SiC中氦气气泡和圆盘的演变
7. Evolution of Helium Bubbles and Discs in Irradiated 6H-SiC during Post-Implantation Annealing [O] . Qiang Shen, Wei Zhou, Guang Ran, 2017

机译：后植入退火过程中辐照6H-siC中氦气泡和圆盘的演变

Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC

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