首页>
外国专利>
Low temperature anneal to reduce defects in hydrogen-implanted, relaxed SiGe layer
Low temperature anneal to reduce defects in hydrogen-implanted, relaxed SiGe layer
展开▼
机译:低温退火可减少注入氢的松弛SiGe层中的缺陷
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method of forming a SiGe layer having a relatively high Ge content includes preparing a silicon substrate; depositing a layer of SiGe to a thickness of between about 100 nm to 500 nm, wherein the Ge content of the SiGe layer is equal to or greater than 10%, implanting H2+ ions through the SiGe layer into the substrate at a dose of between about 2×1014 cm−2 to 2×1016 cm−2, at an energy of between about 20 keV to 100+ keV; low temperature thermal annealing at a temperature of between about 200° C. to 400° C. for between about ten minutes and ten hours; high temperature thermal annealing the substrate and SiGe layer, to relax the SiGe layer, in an inert atmosphere at a temperature of between about 650° C. to 1000° C. for between about 30 seconds and 30 minutes; and depositing a layer of silicon-based material on the relaxed SiGe layer to a thickness of between about 5 nm to 30 nm.
展开▼