State Key Laboratory of electronic Thin Films and Integrated Devices, University of ElectronicScience and Technology of China, Chengdu 610054, China;
State Key Laboratory of electronic Thin Films and Integrated Devices, University of ElectronicScience and Technology of China, Chengdu 610054, China;
State Key Laboratory of electronic Thin Films and Integrated Devices, University of ElectronicScience and Technology of China, Chengdu 610054, China;
State Key Laboratory of electronic Thin Films and Integrated Devices, University of ElectronicScience and Technology of China, Chengdu 610054, China;
State Key Laboratory of electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
TaNx thin films; magnetron sputtering; nitrogen partial flux; electrical properties;
机译:氮分流对铝掺杂TaN_x薄膜相结构和电性能的影响
机译:湿化学法制备的纳米结构掺杂铜的ZnS多晶薄膜:掺杂铜和膜厚对结构,光学和电学性质的影响
机译:湿化学法制备的纳米结构掺杂铜的ZnS多晶薄膜:掺杂铜和膜厚对结构,光学和电学性质的影响
机译:氮分流对铝掺杂TaN_x薄膜相结构和电性能的影响
机译:纳米晶的未掺杂和掺杂的氧化铈薄膜的微结构及其电学和光学性质。
机译:低温处理的Sn掺杂In2O3薄膜的电性能:微观结构和氧含量的作用以及缺陷调制掺杂的潜力
机译:Bi掺杂对ZnO薄膜超晶格和微结构电学和光学性质的影响