Residual layer-free detachment-based nanolithography

摘要

We present a simple method to generate nanostructures without residual layer using detachment-based nanolithography. Spin coated organic thin film and patterned stamp such as ultraviolet (UV) curable mold were prepared. The mold and organic thin film were contacted by slight pressure (1～2 bar). While conformal contact between mold and organic thin film, the sample was heated under the glass transient temperature. After cooling to room temperature, the mold was removed from substrate, rendering a pattern organic layer without residual layer. This method can form as small as 70 nm lines.