Growth and characterization of in-plane heterostructures based on two-dimensional materials

摘要

Here, we report on our recent progresses of metal-organic chemical vapor deposition (CVD) growth of two-dimensional heterostructures based on transition metal dichalcogenide (TMDC) atomic layers. Controlling the precursor supply enables the formation of TMDC-based in-plane heterostructures with atomically straight junctions without defects or alloy formation around the interface. The present findings pave way for the simple and rapid synthesis of large scale, high quality TMDC-based heterostructures, quantum wires, and surperlattices.