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Characterization of safe solvent PMMA resist variables for electron-beam a

机译:电子束a的安全溶剂PMMA抗蚀剂变量的表征

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Abstract: Results are presented from a study undertaken to evaluate resist casting solvent composition and molecular weight variation in PMMA for electron beam exposure. PMMA cast in several solvent systems have been evaluated for lithographic performance. Additionally, formulations in chlorobenzene with minor variations in molecular weight have been evaluated for batch-to-batch uniformity. A 10 KeV MEBES electron beam system has been used to study resist sensitivity, contrast, and process latitude. Using a two-factor, three level factorial designed experiment, prebake and development time have been varied as controlled process factors. Samples with varying molecular weights were shown to have wide process latitude. These samples gave comparable performance while their molecular weights varied from 539 K to 614 K, and polydispersity varied from 3.3 to 6.1. Resist samples with chlorobenzene, PGMEA (propylene glycol monomethyl ether acetate), and anisole as the casting solvent resulted in equivalent performance. !2
机译:摘要:这项研究的结果来自评估用于电子束曝光的PMMA中的抗蚀剂浇铸溶剂组成和分子量变化。已经评估了在几种溶剂体系中铸造的PMMA的光刻性能。另外,已经评估了分子量较小变化的氯苯制剂的批次间均匀性。 10 KeV MEBES电子束系统已用于研究抗蚀剂的灵敏度,对比度和工艺范围。使用两因素,三水平因素设计的实验,预烘烤和显影时间已作为受控过程因素进行了更改。具有不同分子量的样品显示具有宽的工艺范围。这些样品的分子量从539 K到614 K不等,多分散性从3.3到6.1不等,它们的性能相当。用氯苯,PGMEA(丙二醇单甲醚乙酸酯)和苯甲醚作为浇铸溶剂来抵抗样品,可获得等效的性能。 !2

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