HIGH PERFORMANCE AlGaN/GaN HEMTs WITH RECESSED GATE

摘要

High performance AlGaN/GaN-HEMTs (High Electron Mobility Transistors) with recessed gate have been successfully fabricated on sapphire and SiC substrates. The HEMT with 0.15μm gate length on sapphire substrate exhibited excellent drain current and high frequency performances. The maximum extrinsic trans-conductance was as high as 450 mS/mm. And the maximum unity current cut-off frequency f_T of 67 GHz and the maximum oscillation frequency f_(max) of 126 GHz was obtained, respectively. Moreover, highest trans-conductance of 525 mS/mm was attained by 0.21μm gate length recessed gate HEMT fabricated on SiC substrate.