首页> 外文会议>Electrochemical Society Meeting and International Symposium on Chemical Mechanical Planarization VI; 20031012-20031017; Orlando,FL; US >EFFECTS OF ABRASIVE MORPHOLOGY AND SURFACTANT IN NANO-CERIA SLURRY FOR SHALLOW TRENCH ISOLATION CHEMICAL MECHANICAL POLISHING
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EFFECTS OF ABRASIVE MORPHOLOGY AND SURFACTANT IN NANO-CERIA SLURRY FOR SHALLOW TRENCH ISOLATION CHEMICAL MECHANICAL POLISHING

机译:磨砂形态和表面活性剂在纳米铈砂浆中对浅沟槽隔离化学机械抛光的影响

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摘要

The effects of the abrasive morphology and surfactant concentration in ceria slurry on the removal rates for oxide and nitride films were investigated through a systematic chemical-mechanical-polishing (CMP) experiment. We found that the smaller the abrasives were, the more quickly the removal rates for both oxide and nitride films decreased with increasing surfactant concentration. This result was qualitatively explained by a model in which abrasive particles move through a viscous layer caused by surfactant adsorption on the film surface being polished.
机译:通过系统的化学机械抛光(CMP)实验研究了二氧化铈浆料中磨料形态和表面活性剂浓度对氧化膜和氮化膜去除率的影响。我们发现,磨料越小,随着表面活性剂浓度的增加,氧化膜和氮化膜的去除率下降的速度就越快。该结果用模型定性地解释,在该模型中,由于表面活性剂吸附在被抛光的薄膜表面上,导致磨料颗粒穿过粘性层。

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