首页> 外文会议>International Symposium on Chemical Mechanical Planarization in Integrated Circuit Device Manufacturing >EFFECTS OF ABRASIVE MORPHOLOGY AND SURFACTANT IN NANO-CERIA SLURRY FOR SHALLOW TRENCH ISOLATION CHEMICAL MECHANICAL POLISHING
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EFFECTS OF ABRASIVE MORPHOLOGY AND SURFACTANT IN NANO-CERIA SLURRY FOR SHALLOW TRENCH ISOLATION CHEMICAL MECHANICAL POLISHING

机译:磨蚀形态和表面活性剂在纳米纤维浆料中的浅沟隔离化学机械抛光作用

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摘要

The effects of the abrasive morphology and surfactant concentration in ceria slurry on the removal rates for oxide and nitride films were investigated through a systematic chemical-mechanical-polishing (CMP) experiment. We found that the smaller the abrasives were, the more quickly the removal rates for both oxide and nitride films decreased with increasing surfactant concentration. This result was qualitatively explained by a model in which abrasive particles move through a viscous layer caused by surfactant adsorption on the film surface being polished.
机译:通过系统化学机械抛光(CMP)实验,研究了磨料浆料中磨料形态和表面活性剂浓度对氧化物和氮化物膜的去除速率的影响。我们发现研磨剂越小,氧化物和氮化物膜的去除率越快,随着表面活性剂浓度的增加而降低。该结果通过模型进行了定性解释,其中磨料颗粒通过由表面活性剂吸附在膜表面上的表面活性剂吸附引起的粘性层进行。

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