Fabrication of LaNiO_3 Thin Film on the Si-Substrate by Sol-Gel Process

摘要

Due to its perovskite crystal structure and good conductivity, LaNiO_3 (LNO) can be used as the electrode for piezoelectric and ferroelectric films. With the development of the silicon-based integrated ferroelectrics, preparation of LNO electrode film with good conductivity is of great importance for high-performance ferroelectric films. In this paper, LNO sol was prepared using the nickel acetate and the lanthanum nitrate as starting materials, with the acrylic acid as stablizer. Through the sol-gel process, LNO films with certain crystal orientation were prepared on silicon substrate. The film microstructure and electrical properties were analyzed. Results indicate that through proper sol component and heat treatment process, (100)-oriented, mirror-like LNO films with low surface resistance of 50 Ω/□ can be obtained, which can be used as the electrode for the ferroelectric films.