A Novel Chemically Amplified Positive Photoresist for UV Lithography

摘要

A novel chemically amplified positive i-line photoresists can be formed by 2,3,4-tris[2-diazo-l-(2H)-naphthalenone-4-sulfonyloxy] benzophenone (2,1,4-DNQ) and an acidolytic acetal polymer. When irradiated with i-line light, the 2,1,4-DNQ sulfonate undergo photolysis not only to give off nitrogen gas but also generate sulfonic acid which can result in the decomposition of the acidolytic polymer. The lithographic performance of the resist materials is evaluated and significant advantages (higher resolution and sensitivity) over conventional novolak/ diazonaphthoquinone (DNQ) resist system can be observed.