Chemically Amplified Photoresist for Electron Beam Lithography

摘要

Performance of semiconductor devicfes has been explsoively grown for several decades. Presently, 256 M bits DRAM with 0.25 mum design rule is being produced by many semiconductor device makers and continuous efforts for reducing the pattern size below sub-0.2 mum are making it possible to develop 1 Giga and 4 Giga bits DRAM.