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机译:用于电子束和EUV光刻的非化学放大负型光刻胶的性能评估
Indian Institute of Technology Mandi, School of Computing and Electrical Engineering, Mandi, Himachal Pradesh 175001, India;
Indian Institute of Technology Mandi, School of Basic Sciences, Mandi, Himachal Pradesh 175001, India;
Depto. de Quimica, Lab. de Nanotecnologia e Ingenieria Molecular, CBI, UAM-I, Mexico D.F., Mexico;
Depto. de Quimica, Lab. de Nanotecnologia e Ingenieria Molecular, CBI, UAM-I, Mexico D.F., Mexico;
Indian Institute of Technology Mandi, School of Computing and Electrical Engineering, Mandi, Himachal Pradesh 175001, India;
Universidade Federal do Rio Grande do Sul, UFRGS, Instituto de Quimica, Avenida Bento Goncalves 9500, P.O. Box 15003, 91501-970 Porto Alegre, RS, Brazil;
Universidade Federal do Rio Grande do Sul, UFRGS, Instituto de Quimica, Avenida Bento Goncalves 9500, P.O. Box 15003, 91501-970 Porto Alegre, RS, Brazil;
Universidade Federal do Rio Grande do Sul, UFRGS, Instituto de Quimica, Avenida Bento Goncalves 9500, P.O. Box 15003, 91501-970 Porto Alegre, RS, Brazil;
Indian Institute of Technology Mandi, School of Basic Sciences, Mandi, Himachal Pradesh 175001, India;
Indian Institute of Technology Mandi, School of Basic Sciences, Mandi, Himachal Pradesh 175001, India;
nonchemically amplified resist; postexposure bake; postapply bake; e-beam lithography; extreme ultraviolet lithography; surface roughness; contrast; sensitivity; etch resistance;
机译:电子束和EUV暴露下锡氧代笼式光致抗蚀剂的双调施用
机译:电子束和EUV曝光条件下锡-氧笼式光刻胶的双色调应用
机译:基于低活化能的非化学放大光刻胶(n-CARs)的设计和开发,用于下一代EUV光刻
机译:带有负甲硅酸商业光刻胶Sal 601和AZPN 114的表面硅烷化的正电子束光刻
机译:高级光刻胶材料的设计和研究:减少环境影响的正性光刻胶和用于157 nm光刻的材料。
机译:超越EUV光刻技术:有效光刻胶性能的比较研究
机译:用于EUV光刻的负色度化学放大分子抗蚀剂平台的11nm半间距分辨率