Design and study of advanced photoresist materials: Positive tone photoresists with reduced environmental impact and materials for 157 nm lithography.

摘要

Concern about using organic solvents in semiconductor manufacturing led us to consider a photoresist system that can be fully processed with aqueous media. A series of new polymers were designed and prepared that demonstrate fully aqueous processable positive tone imaging. Positive tone imaging requires two solubility switches, and this has been accomplished by two different methods. In both cases, a post application baking step was utilized to render the water soluble polymer insoluble in water, and photo-induced acid catalyzed reactions regenerated aqueous solubility only in the exposed areas.;The first system is based on the reaction of vinyl ethers. When the film is baked after casting from water, the vinyl ethers incorporated into the photoresist react with acidic hydroxyl groups on the matrix polymer to form acetal cross-linkages. The acetal linkages of the exposed areas are hydrolyzed by photo-acids to create positive tone imaging with pure water development. Although these systems provided positive tone imaging and were successfully cast from and developed with pure water, there are some shortcomings to this design approach such as poor dry etch resistance and short shelf life.;The second system was designed to address these shortcomings. Various polystyrene-based polymers bearing ammonium salts of malonic acid monoesters were prepared and studied. The ammonium salts render the styrenic polymers soluble in water. Upon baking, ammonia is volatilized, and the resulting malonic acid monoester undergoes decarboxylation that results in formation of a base insoluble polymer. Studies on the selection of acid labile ester protecting groups, kinetics of decarboxylation and imaging are presented.;Lithography with 157 nm exposure is the most promising candidate for post-193 nm lithography, and this technology is expected to provide the resolution required for the next generation of microelectronic devices. Designing photoresists for 157 nm imaging is a challenge because air, water and even the simplest hydrocarbon polymers such as polyethylene absorb strongly at this wavelength. Incorporation of fluorine atoms into matrix polymers is the key to reducing their absorbance at 157 nm. Studies on the metal-catalyzed polymerization of fluorine-containing norbornene derivatives for this application are also presented.