TCAD Modelling of 30nm Strained-Si/SiGe/Si Channel MOSFET

摘要

Technical-Computer-Aided-Design (TCAD) tools are the bridging element between electronics design and manufacturing. Design of novel devices using TCAD initially and analyzing all the physics prior to direct manufacturing reduces the cost and increase the optimization in device operation. Modeling of the scaled down tri-layered strained-Si/strained-SiGe/strained-Si channel based heterostructure on insulator (HOI) Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) device developed using Sentaurus TCAD is illustrated in this paper. A complete modeling of the device physics that encountered for the reduced dimension device remains the crux of this paper. As a result, an enhanced drive current pertaining to the scaled HOI MOSFET is achieved, thus ensuring the further scalability of the said HOI MOSFET device for improved performance.