The distribution of hydrogen penetrated into n-type silicon crystals during chemical etching is described mathematically. The depth profiles of the defects passivated by hydrogen and of defect-hydrogen complexes are also calculated. Comparison with the experimental date obtained on the silicon crystals with radiation defects and doped with transition metals reveals that the model adequately describes the processes inthe crystal. By comparing the parameters of the depth profiles, the passivation and appearance of different defects are shown to be cuased by the same diffusing species. The number of hydrogen atoms contained in the defect-hydrogen complexes and the distance of the hydrogen-defect interaction are determined from the characteristic length of the defect distribution. The diffusion length (1 to 3 #mu#m) and diffusivity (>5 centre dot 10~(-9) cm~2s~(-1)) of hydrogen at room temperature are found indirectly based on the other defect distribution.
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