首页> 外国专利> METHODS FOR CHARACTERIZING DEFECTS ON SILICON SURFACES, ETCHING COMPOSITION FOR SILICON SURFACES AND PROCESS OF TREATING SILICON SURFACES WITH THE ETCHING COMPOSITION

METHODS FOR CHARACTERIZING DEFECTS ON SILICON SURFACES, ETCHING COMPOSITION FOR SILICON SURFACES AND PROCESS OF TREATING SILICON SURFACES WITH THE ETCHING COMPOSITION

机译:表征硅表面缺陷的方法,硅表面的蚀刻成分以及用蚀刻成分处理硅表面的方法

摘要

Methods for characterizing defects on silicon surfaces, etching composition for silicon surfaces and process of treating silicon surfaces with the etchingcomposition AbstractThe present invention relates to a method for characterizing defects on silicon surfaces, in particular silicon wafers, a method for treating silicon surfaces with an etching solution and the etching solution to be employed in the method and process of the present invention.Fig. 6
机译:表征硅表面缺陷的方法,蚀刻组合物硅表面以及通过蚀刻处理硅表面的工艺组成抽象用于表征硅表面缺陷的方法技术领域本发明涉及一种用于表征硅表面缺陷的方法,特别是硅晶片,一种用蚀刻溶液处理硅表面的方法以及本发明的方法和工艺中使用的蚀刻溶液发明。图6

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