Single and Double Junction Photovoltaic Cells Based on InP Using Lattice-Matched InGaAs and InGaAsP

摘要

We report on the design and implementation of photovoltaic cells using the lattice matched ternary and quaternary InGaAsP/InP system. These cells are designed for use in thermophotovoltaic (TPV) applications, as well as back cells in solar concentrators. Single junction InGaAs cells have been optimised and characterised under a range of conditions producing a 12.4% efficiency under 0.62Wcm 3250K blackbody radiation. Single junction performance can be accurately modelled, predicting an efficiency of >15% under a 1350K selective emitter. Double junction designs for high intensity applications are also reported here, in order to increase fundamental efficiency and reduce series resistance losses.