首页> 外文会议>Conference on Advanced Laser Technologies; Sep 15-20, 2002; Adelboden, Switzerland >Photomodulation of resonance Rayleigh scattering spectra in the structures with GaAs/AlGaAs quantum wells
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Photomodulation of resonance Rayleigh scattering spectra in the structures with GaAs/AlGaAs quantum wells

机译:GaAs / AlGaAs量子阱在结构中共振瑞利散射光谱的光调制

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It is found that the intensity of resonant light scattering in the region of excitonic transitions in GaAs/AlGaAs quantum-well structures is modulated strongly (up to 40% under our experimental conditions) upon additional pumping of the structure by radiation with the photon energy exceeding the band gap in the barrier layers. The effect observed originates from the redistribution of the oscillator strengths of the excitonic transitions due to the formation of charged three-particle complexes (trions) made possible by the accumulation of nonequilibrium charge carriers of one particular sign (holes in our case) in the quantum wells upon above-barrier pumping.
机译:发现在光子能量超过1的辐射额外泵浦结构时,GaAs / AlGaAs量子阱结构的激子跃迁区域中共振光散射的强度受到强烈调制(在我们的实验条件下高达40%)。势垒层中的带隙。观察到的效应源自激子跃迁的振荡器强度的重新分布,这归因于带电三粒子复合物(三子)的形成,这是由于量子中一个特殊符号(在本例中为孔)的非平衡电荷载流子的积累而可能实现的。高于障碍物抽水的井。

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