150-V class superjunction power LDMOS transistor switch on SOI

摘要

The electrical characteristics of a 150 V class superjunction power LDMOS transistor switch on SOI are compared with those of a conventional SOI RESURF (reduced surface field) LDMOS transistor using simulation. The proposed device has an effective chip area of 0.91 mm×0.91 mm and exhibits a specific on-resistance of 1.65 mΩcm², and a total gate charge of 1.17 nC at V_gs=10 V with a related figure of merit (FOM=Q_g.R_on) of 0.23 Ω.nC.