Correction to the Schenk Model of Band-to-Band Tunneling in Silicon Applied to the Simulation of Nanowire Tunneling Transistors

摘要

We found out that the standard form of Schenk's model of band-to-band tunneling in silicon involves a poor approximation of the Airy-Integral and, therefore, overestimates the channel currents of realistic tunneling devices. In this paper we propose a better approximation resulting in a corrected form of the model, and we demonstrate its impact on the device characteristics of a tunneling transistor. Additionally, we investigated the influence of the corrected model on the local density correction and quantum confinement.