A Trench Isolation Technology of Reverse Conducting Gate Commutated ThyristorA Trench Isolation Technology of Reverse Conducting Gate Commutated Thyristor

摘要

A trench isolation technology is introduced into Reverse Conducting Gate Commutated Thyristor (RC-GCT), and the design consideration; realization process and advantages of trench separation region were discussed. The results show that the trench separation used in RC-GCT devices can improve the forward blocking characteristic and reduce remarkably the complexity of process, only has a little influence on the gate reverse characteristics simultaneity. This conclusion is validated by analysis for the gate characteristic and forward blocking characteristic by using MEDICI simulator and compared with that of the RC-GCT with pnp separation region. Lastly, the structural parameters of the trench are optimized.