A low-cost SiGe:C BiCMOS technology with embedded flash memory and complementary LDMOS module

机译：具有嵌入式闪存和互补LDMOS模块的低成本SiGe：C BiCMOS技术

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We present a low-cost, modular BiCMOS process for wireless and mixed-signal applications. A SiGe:C bipolar module, a complementary LDMOS module, and a low-power flash memory were combined with a 0.25/spl mu/m CMOS technology to enable SoC integration. Th

机译：我们为无线和混合信号应用提出了一种低成本的模块化BiCMOS工艺。将SiGe：C双极模块，互补LDMOS模块和低功耗闪存与0.25 / splμ/ m CMOS技术相结合，以实现SoC集成。钍

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《Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2005 IEEE》|2005年|P.132-135|共4页
会议地点 Santa BarbaraCA
作者
Knoll; D.; Fox; A.; Ehwald; K.E.; Heinemann; B.; Barth; R.; Fischer; A.; Rucker; H.; Schley; P.; Scholz; R.; Korndorfer; F.; Senapati; B.; Stikanov; V.E.; Tillack; B.; Winkler; W.; Wolf; Ch.; Zaumseil; P.;
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BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; MOSFET; carbon; flash memories; heterojunction bipolar transistors; low-power electronics; 0.25 micron; BiCMOS technology; CMOS technology; SiGe:C; SoC integration; bipolar module; complementary LDMOS;

机译：BiCMOS集成电路； CMOS集成电路；锗硅合金; MOSFET;碳;闪存；异质结双极晶体管；低功耗电子产品； 0.25微米； BiCMOS技术； CMOS技术； SiGe：C; SoC集成；双极模块互补LDMOS;

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1. Cost-effective integration of an FN-programmed embedded flash memory into a 0.25 μm SiGe:C RF-BiCMOS technology [J] . A. Fox, K.E. Ehwald, P. Schley, Microelectronics journal . 2006,第11期

机译：将FN编程的嵌入式闪存经济高效地集成到0.25μmSiGe：C RF-BiCMOS技术中
2. Radiation tolerant RF-LDMOS transistors, integrated into a 0.25 μm SiGe-BICMOS technology [J] . Sorge R., Schmidt J., Reimer F., Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2019,第APRa21期

机译：集成到0.25μmSiGe-BICMOS技术中的耐辐射RF-LDMOS晶体管
3. Radiation tolerant RF-LDMOS transistors, integrated into a 0.25 μm SiGe-BICMOS technology [J] . Sorge R., Schmidt J., Reimer F., Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2019,第Apra21期

机译：辐射耐受RF-LDMOS晶体管，集成到0.25μm的SiGe-Bicmos技术中
4. A low-cost SiGe:C BiCMOS technology with embedded flash memory and complementary LDMOS module [C] . Knoll, D., Fox, . 2005

机译：具有嵌入式闪存和互补LDMOS模块的低成本SiGe：C BiCMOS技术
5. High-Performance Memory Systems Using SiGe HBT BiCMOS Technology [D] . Liu, Xuelian. 2014

机译：使用SiGe HBT BICMOS技术的高性能内存系统
6. Development and characterisation of a process technology for a 0.25µm SiGe:C RF-BiCMOS embedded flash memory [O] . Fox Alexander 2006

机译：0.25μmSiGe：C RF-BiCMOS嵌入式闪存的处理技术的开发和表征

A low-cost SiGe:C BiCMOS technology with embedded flash memory and complementary LDMOS module

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