Semiconductor Research Center, Wright State University, Dayton, OH 45435, USA;
Semiconductor Research Center, Wright State University, Dayton, OH 45435, USA;
Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433, USA;
Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433, USA;
Semiconductor Research Center, Wright State University, Dayton, OH 45435, USA,Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433, USA;
electronic defects; InGaZnO (IGZO); pulse laser deposition (PLD); dark current (DC); photocurrent (PC); persistent photocurrent (PPC); thermally stimulated current (TSC) spectroscopy; thermal annealing;
机译:通过热刺激电流光谱研究的PLD生长IGZO(IN_2GA_2ZN_5O_(11))薄膜的深度水平缺陷及其不稳定性
机译:通过等温和深能级瞬态光谱研究各种同质外延金刚石薄膜中的深层能级空穴陷阱轮廓和物理性质
机译:光诱导瞬态光谱法研究非晶In-Ga-Zn-O薄膜晶体管中陷阱态与负偏压热照明应力稳定性的相关性
机译:通过热刺激的电流光谱研究的PLD生长内部GA-ZN-O薄膜中的持续光电流和深层陷阱
机译:介电分析和热激电流分析在聚合物涂层溶液,薄膜和涂层基材上的应用。
机译:原子力显微镜和力谱研究双棕榈酰磷脂酰胆碱Langmuir-Blodgett膜的热响应
机译:热刺激电流谱研究半绝缘InP中的陷阱
机译:CdZnTe辐射探测器的补偿和陷阱研究热电发射光谱,热刺激电导率和电流 - 电压测量